5-67 2 C 16 ghz general purpose gallium arsenide fet technical data atf-26836 36 micro-x package symbol parameters and test conditions units min. typ. max. electrical specifications, t a = 25 c g ss tuned small signal gain: v ds = 5 v, i ds = 30 ma f = 12.0 ghz db 7.0 9.0 nf o optimum noise figure: v ds = 3 v, i ds = 10 ma f = 12.0 ghz db 2.2 g a gain @ nf o : v ds = 3 v, i ds = 10 ma f = 12.0 ghz db 6.0 p 1 db power output @ 1 db gain compression: f = 12.0 ghz dbm 15.0 18.0 v ds = 5 v, i ds = 30 ma g m transconductance: v ds = 3 v, v gs = 0 v mmho 15 35 i dss saturated drain current: v ds = 3 v, v gs = 0 v ma 30 50 90 v p pinch-off voltage: v ds = 3 v, i ds = 1 ma v -3.5 -1.5 -0.5 note: 1. refer to packaging section tape-and-reel packaging for surface mount semiconductors. features ? high output power: 18.0 dbm typical p 1 db at 12 ghz ? high gain: 9.0 db typical g ss at 12 ghz ? cost effective ceramic microstrip package ? tape-and-reel packaging option available [1] 5965-8704e description the atf-26836 is a high perfor- mance gallium arsenide schottky- barrier-gate field effect transistor housed in a cost effective microstrip package. this device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16 ghz frequency range. this gaas fet device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
5-68 atf-26836 typical performance, t a = 25 c atf-26836 absolute maximum ratings absolute symbol parameter units maximum [1] v ds drain-source voltage v + 7 v gs gate-source voltage v -4 v gd gate-drain voltage v -8 i ds drain current ma i dss p t power dissipation [2,3] mw 275 t ch channel temperature c 175 t stg storage temperature [4] c -65 to +175 thermal resistance: q jc = 350 c/w; t ch = 150 c liquid crystal measurement: 1 m m spot size [5] notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 2.9 mw/ c for t case >79 c. 4. storage above +150 c may tarnish the leads of this package difficult to solder into a circuit. after a device has been soldered into a circuit, it may be safely stored up to 175 c. 5. the small spot size of this tech- nique results in a higher, though more accurate determination of q jc than do alternate methods. see measurements section for more information. figure 1. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ds = 5 v, i ds = 30 ma. frequency (ghz) gain (db) |s 21 | 2 msg 2.0 4.0 6.0 8.0 10.0 12.0 16.0 25 20 15 10 5 0 figure 2. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ds = 3 v, i ds = 10 ma. frequency (ghz) gain (db) |s 21 | 2 msg mag 25 20 15 10 5 0 2.0 4.0 6.0 8.0 10.0 12.0 16.0 part number ordering information part number devices per reel reel size atf-26836-tr1 1000 7" ATF-26836-STR 10 strip
5-69 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ds =3 v, i ds = 10 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 2.0 .94 -38 8.2 2.57 138 -27.1 .044 60 .74 -26 3.0 .90 -55 7.8 2.45 120 -24.9 .057 51 .71 -35 4.0 .84 -72 7.6 2.41 102 -22.9 .072 44 .71 -44 5.0 .75 -92 8.0 2.50 82 -20.6 .093 30 .66 -53 6.0 .64 -117 8.1 2.55 61 -19.3 .109 15 .60 -64 7.0 .52 -155 8.3 2.60 37 -18.1 .124 5 .51 -78 8.0 .49 163 7.9 2.47 14 -17.5 .133 -12 .41 -92 9.0 .52 126 7.2 2.30 -7 -16.9 .143 -21 .30 -106 10.0 .56 100 6.4 2.10 -28 -16.8 .144 -32 .24 -125 11.0 .61 78 5.6 1.91 -47 -17.1 .140 -41 .18 -154 12.0 .67 58 4.7 1.71 -66 -17.1 .139 -49 .15 168 13.0 .69 45 3.9 1.57 -83 -17.3 .137 -61 .17 134 14.0 .72 35 3.0 1.42 -98 -17.2 .138 -66 .19 107 15.0 .72 22 2.5 1.33 -115 -17.2 .138 -77 .23 89 16.0 .72 13 2.0 1.26 -128 -17.4 .135 -85 .27 71 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ds =5 v, i ds = 30 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 2.0 .94 -44 9.0 2.82 130 -30.2 .031 65 .80 -31 3.0 .86 -63 8.5 2.65 110 -28.4 .038 56 .80 -43 4.0 .78 -81 8.0 2.51 89 -26.9 .045 47 .79 -52 5.0 .68 -97 7.9 2.49 71 -25.5 .053 41 .78 -58 6.0 .57 -118 8.1 2.53 51 -24.4 .060 39 .76 -67 7.0 .43 -151 8.5 2.65 28 -22.4 .076 38 .73 -80 8.0 .37 165 8.5 2.66 3 -20.6 .093 30 .69 -99 9.0 .40 122 8.0 2.52 -20 -18.0 .126 15 .64 -119 10.0 .47 96 7.7 2.42 -42 -16.4 .152 3 .66 -140 11.0 .55 75 7.5 2.37 -66 -15.1 .176 -4 .63 -166 12.0 .61 53 7.4 2.35 -88 -13.8 .205 -19 .64 168 13.0 .71 33 7.4 2.34 -116 -13.2 .220 -39 .71 132 14.0 .71 10 6.7 2.17 -143 -13.5 .212 -56 .78 104 15.0 .65 -10 5.7 1.93 -170 -14.0 .200 -72 .85 79 16.0 .58 -30 4.2 1.62 166 -14.9 .180 -93 .98 61 a model for this device is available in the device models section.
5-70 36 micro-x package dimensions 1 3 4 2 source source drain gate 2.15 (0.085) 2.11 (0.083) dia. 0.508 (0.020) 2.54 (0.100) 4.57 0.25 0.180 0.010 0.15 0.05 (0.006 0.002) notes: 1. dimensions are in millimeters (inches) 2. tolerances: in .xxx = 0.005 mm .xx = 0.13 0.56 (0.022) 1.45 0.25 (0.057 0.010) 268
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